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二极管箝位式三电平VSC损耗分析
刘军娜1, 赵成勇1, 李广凯2
1.华北电力大学 电力系统保护与动态安全监控教育部重点实验室,河北 保定 071003;2.南方电网技术研究中心,广东 广州 510623
摘要:
用二次多项式表征特定温度下IGBT和二极管的通态压降、开关损耗与电流的非线性关系,方法简单且准确度高。通过分析二极管箝位式三电平电压源换流器的工作机理,依据电压、电流关系分析确定开关器件的导通规律和导通占空比。采用多项式方法拟合IGBT器件手册提供的特性曲线,建立多项式损耗模型,给出了一种基于曲线拟合理论计算损耗的方法。基于该方法计算了二极管箝位式三电平电压源换流器的各个开关器件功率损耗,得出各个开关器件的损耗分布是不平衡的,不平衡程度随着功率因数和调制度的变化而变化,并给出了4种特殊运行情况下,各个开关器件的功率损耗分布图。
关键词:  二极管箝位式三电平换流器  损耗计算  损耗分布  拟合
DOI:
分类号:
基金项目:国家自然科学基金项目(50577018);“十一五”国家科技支撑计划重点项目(2007BAA12B03)
Power loss analysis of diode-clamped three-level VSC
LIU Junna1, ZHAO Chengyong1, LI Guangkai2
1.Key Laboratory of Power System Protection and Dynamic Security Monitoring and Control under Ministry of Education,North China Electric Power University,Baoding 071003,China;2.China Southern Power Grid Technology Research Center,Guangzhou 510623,China
Abstract:
The nonlinear relationships between their on-state voltage drop or switching loss and the current are represented by the quadratic polynomial for IGBT and diode at specified temperature,which is simple and accurate. Based on the mechanism analysis of diode-clamped three-level converter,the conduction rules and conduction duty cycle are determined according to the relationship between voltage and current. The characteristic curve of IGBT is fitted with polynomial to establish its loss model,based on which its loss calculation method is proposed. With the proposed method,the power loss of each switching device is calculated for the diode-clamped three-level converter. It is concluded that,the loss distribution of each switching device is unbalanced,varying with the power factor and the modulation index. The loss distribution graphs are given for four special operating conditions.
Key words:  diode-clamped three-level converter  loss calculation  loss distribution  fitting

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