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| 摘要: |
| 绝缘栅双极型晶体管IGBT(Insulated Gate Bipolar Transistor)因其开关速度快、工作频率高、控制方便等优点得到广泛应用，但随着电力电子技术的高频、大功率化发展，开关工作时会造成较高损耗和严重的电磁干扰，甚至元件本身也会因过压、过流问题造成损坏。从IGBT的内部结构特点出发，讨论了IGBT工作中上述问题存在的原因，整理了目前国内外常用的一些处理措施，包括软开关技术、吸收电路技术以及研制新的开关元件等。软开关通过控制电压、电流状态，使其在开关过程中保持不变，抑制di／dt，du／dt;吸收电路是吸收开关过程中di／dt，du／dt产生的多余能量，然后反馈至其他地方。而采用新的开关元件集成门极换流晶闸管IGCT(Integrated Gate Commutated Thyristor)，从开关本身出发解决问题是个有潜力的方案。 |
| 关键词: IGBT di／dt 软开关技术 吸收电路 |
| DOI： |
| 分类号:TN386.2 |
| 基金项目: |
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| Problems occurred in IGBT and their resolvents |
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PAN Xing LIU Hui-jin
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| Abstract: |
| IGBT(Insulated Gate Bipolar Transistor) is widely used because of its merits of high swi-tching speed,high frequency and easy control. But along with power electronics technology deve-lopment for higher frequency and capacity,the switcher brings high losses and severe EMI,and the over-voltage or over-current results in component damage. The causes are discussed from the inner structure of IGBT and the typical countermeasures are summarized,including soft-switching,snubber circuit and new switching component. The soft-switching holds the states of voltage and current during switching period to restrain the d i / d t and d u / d t;the snubber circuit absorbs the extra energy produced by d i / d t and d u / d t and feeds back to another region. Application of new switching component IGCT (Integrated Gate Commutated Thyristor) is a challenging scheme. |
| Key words: IGBT,d i / d t,soft-switching,snubber circuit |
