引用本文:石经纬,巩春志,张可心,田修波,杨士勤.基于同步信号的多路延时IGBT驱动电路设计[J].电力自动化设备,2012,32(1):
SHI Jingwei,GONG Chunzhi,ZHANG Kexin,TIAN Xiubo,YANG Shiqin.Design of multi-channel time-delayed IGBT driving circuit based on synchronous signals[J].Electric Power Automation Equipment,2012,32(1):
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基于同步信号的多路延时IGBT驱动电路设计
石经纬, 巩春志, 张可心, 田修波, 杨士勤
哈尔滨工业大学 现代焊接生产技术国家重点实验室,黑龙江 哈尔滨 150001
摘要:
基于同步信号设计了一种可实现相互之间高压隔离的IGBT多路延时驱动电路系统,并应用到Marx电路中,实现了可柔性调节的阶梯型脉冲高压输出。试验结果表明,延时驱动电路可实现最大30μs的延时,且具有IGBT驱动电压欠压保护、自给反向栅压等功能,同时场效应管的存在抑制了栅射极电压振荡。驱动信号高压隔离变压器为单原边多副边结构,简单紧凑,通过副边数目的增减,可驱动不同级数的Marx电路,具有扩展性好的优点。过流保护电路反应速度快,IGBT关断可靠,可在2μs之内抑制短路电流继续上升。该驱动电路应用于10级的Marx电路中,实现了峰值电压10 kV,脉冲宽度30μs,最大电压阶数10阶的脉冲高压输出。
关键词:  延时  驱动电路  Marx电路  阶梯型脉冲  欠压保护  IGBT  场效应管
DOI:
分类号:
基金项目:国家自然科学基金资助项目(50773015,10975041)
Design of multi-channel time-delayed IGBT driving circuit based on synchronous signals
SHI Jingwei, GONG Chunzhi, ZHANG Kexin, TIAN Xiubo, YANG Shiqin
State Key Laboratory of Advanced Welding Production Technology,Harbin Institute of Technology,Harbin 150001,China
Abstract:
A multi-channel time-delayed IGBT(Insulated Gate Bipolar Transistor) driving circuit system is designed based on synchronous signals,which is applied to Marx circuit for outputting soft-adjustable discrete-step high-voltage pulse. The high-voltage channels are isolated from each other. Experimental results show that,the driving circuit has the maximum time delay of 30μs. It has under-voltage protection,and provides minus-voltage pulses to gate and applies MOSFET to inhibit the gate-emitter voltage oscillation. The high-voltage isolation transformer of driving signal has a compact structure of single primary winding and multiple secondary windings to drive multi-stage Marx circuit with good expandability. Its over-current protection has fast response,which turns IGBT off reliably to suppress the short-circuit current within 2μs. It is applied in the ten-stage Marx circuit to output 10 kV-30μs pulse with up to ten steps.
Key words:  time delay  driving circuit  Marx circuit  discrete-step pulse  under-voltage protection  insulated gate bipolar transistors  MOSFETs

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