| 引用本文: | 赵清林,陈磊,袁精,王玉洁.一种适用于GaN器件的谐振驱动电路[J].电力自动化设备,2019,39(4): |
| ZHAO Qinglin,CHEN Lei,YUAN Jing,WANG Yujie.A resonant gate driver circuit for GaN device[J].Electric Power Automation Equipment,2019,39(4): |
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| 摘要: |
| 针对氮化镓(GaN)器件，传统的驱动电路是电压源型驱动，在高频下充放电回路中的寄生电感会引起栅源电压振荡，超过GaN器件的栅源耐压值，损坏GaN器件。采用谐振驱动(RGD)电路是解决上述传统驱动存在的问题的有效途径之一，利用LC谐振，在GaN器件开通和关断时提供一条低阻抗箝位路径，减小栅源电压的振荡，提供一个稳定的栅源电压。详细分析了RGD电路的工作原理，同时设计制作了1 MHz的Boost变换器原理样机，并给出了实验结果。 |
| 关键词: GaN器件 谐振门极驱动 高频变换器 栅极驱动 |
| DOI：10.16081/j.issn.1006-6047.2019.04.017 |
| 分类号:TM46 |
| 基金项目:光宝科技电力电子技术科研基金资助项目(PRC20151384) |
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| A resonant gate driver circuit for GaN device |
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ZHAO Qinglin, CHEN Lei, YUAN Jing, WANG Yujie
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Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province, College of Electrical Engineering, Yanshan University, Qinhuangdao 066004, China
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| Abstract: |
| GaN devices are traditionally driven by the voltage source circuit, and could be easily damaged when the gate-source voltage of GaN device oscillates and exceeds the maximum withstanding voltage owing to the parasitic inductance in charge and discharge circuit under high-frequency operation. RGD(Resonant Gate Driver) circuit represents an effective approach to solve the problem of oscillation of the gate-source voltage. A low impedance clamped path can be obtained using LC resonance when GaN devices are turned on and off, which can reduce the oscillation of gate voltage and provide a stable gate voltage. The working principle of RGD circuit is described in detail. Meanwhile, a prototype of 1 MHz Boost converter is designed and the experimental results are provided. |
| Key words: GaN device resonant gate driver high frequency converter gate driver |
