| 引用本文: | 宋冬冬,董彪,李鹏程,杜海江.不同机电混合式有载分接开关工作特性实验研究[J].电力自动化设备,2020,40(3): |
| SONG Dongdong,DONG Biao,LI Pengcheng,DU Haijiang.Experimental research on operating characteristics of different types of electromechanical hybrid on load tap-changers[J].Electric Power Automation Equipment,2020,40(3): |
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| 摘要: |
| 为阐明机电混合式有载分接开关(EHOLTC)的工作特性，确定不同半导体器件切换过程的差异，针对不同半导体器件的EHOLTC工作特性进行了实验研究。选用晶闸管、金属氧化物半导体场效应管(MOSFET)和绝缘栅双极型晶体管(IGBT)作为研究对象，利用级绕组取电方式作为控制电源，搭建了3种实验样机平台。结合实验数据，分别计算了各器件工作参数及功耗数据。实测数据表明，EHOLTC燃弧能量约为机械式OLTC燃弧能量的1 ‰，能够有效抑制燃弧，MOSFET单元转移电弧电流能力最强。功率器件损耗接近过渡电阻损耗的5 %，以IGBT单元损耗最低。全控器件换流时间较短，因换流点相位存在不确定因素，有承受高压的风险，可考虑用于中性点调压。从经济和安全角度，半控件具有一定优势。 |
| 关键词: 机电混合式有载分接开关 半导体器件 功率损耗 电弧能量 换流暂态 |
| DOI：10.16081/j.epae.202002016 |
| 分类号:TM564 |
| 基金项目:河北省高等学校科学技术研究青年基金资助项目(QN2018211) |
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| Experimental research on operating characteristics of different types of electromechanical hybrid on load tap-changers |
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SONG Dongdong1,2, DONG Biao1, LI Pengcheng1, DU Haijiang1
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1.College of Information and Electrical Engineering, China Agricultural University, Beijing 100085, China;2.College of Mechanical Electrical and Engineering, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China
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| Abstract: |
| In order to clarify the operating characteristics of EHOLTC(Electromechanical Hybrid On Load Tap-Changer) and determine the differences of switching process between different semiconductor devices, the experimental research is carried out for EHOLTC with different semiconductor devices. SCR(Semiconductor Control Rectifier),MOSFET(Metal Oxide Semiconductor Field Effect Tube) and IGBT(Insulated Gate Bipolar Transistor) are selected as the research objects. Three kinds of experimental prototype platforms are built by using the step windings as the control power source. Combined with the experimental data, the working parameters and power consumption data of each device are calculated respectively. The test data show that EHOLTC arc burning energy is about 1‰ of mechanical on load tap-changer arc burning energy, which can effectively suppress arc burning, and the MOSFET unit has the strongest ability to transfer arc current. The power device loss is close to 5% of the transition resistance loss, and the IGBT unit loss is the lowest. The fully controlled devices have short commutation time, and may bear the risk of high voltage due to uncertain factors of the commutation point phase, which can be considered for voltage regulation at neutral point. From the perspective of economy and security, semi-control has some advantages. |
| Key words: electromechanical hybrid on load tap-changer semiconductor device power loss arc power commutation transient |
