| 引用本文: | 李辉,龙海洋,姚然,王晓,钟懿,李金元.不同封装形式压接型IGBT器件的电-热应力研究[J].电力自动化设备,2020,40(8): |
| LI Hui,LONG Haiyang,YAO Ran,WANG Xiao,ZHONG Yi,LI Jinyuan.Study on electro-thermal stress of press pack IGBT devices with different package forms[J].Electric Power Automation Equipment,2020,40(8): |
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| 摘要: |
| 基于多物理场建模对比分析全压接和银烧结封装压接型IGBT器件的电-热应力。首先根据全压接和银烧结封装压接型IGBT的实际结构和材料属性，建立3.3 kV/50 A压接型IGBT器件的电-热-力多耦合场有限元模型；其次仿真分析额定工况下2种封装IGBT器件的电-热性能，并通过实验平台验证所建模型的合理性；然后研究了3.3 kV/1 500 A多芯片压接型IGBT模块的电-热应力，并探究了不同封装压接型IGBT器件电-热应力存在差异的原因；最后比较了2种封装压接型IGBT器件内部的电-热应力随夹具压力和导通电流变化的规律。结果表明银烧结封装降低了压接型IGBT器件的导通压降和结温，提升了器件散热能力；但银烧结封装也增大了IGBT芯片表面的机械应力，应力增大对IGBT器件疲劳失效的影响亟需实验验证。 |
| 关键词: 压接型IGBT 全压接封装 银烧结封装 多物理场建模 电-热应力分析 |
| DOI：10.16081/j.epae.202008030 |
| 分类号:TM23;TN322+.8 |
| 基金项目:国家自然科学基金智能电网联合基金资助项目(U1966213)；国家重点研发计划项目(2016YFB0901800) |
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| Study on electro-thermal stress of press pack IGBT devices with different package forms |
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LI Hui1, LONG Haiyang1, YAO Ran1, WANG Xiao1, ZHONG Yi1, LI Jinyuan2
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1.State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China;2.State Key Laboratory of Advanced Transmission Technology, Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102209, China
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| Abstract: |
| The electro-thermal stress of silver sintered and fully pressure packaged press pack IGBT has been analyzed based on the multi-physical field modeling. Firstly, the mechanical-thermal-electrical multi-coupling field finite element model of a 3.3 kV/50 A press pack IGBT device is established based on the actual structure and material properties of silver sintered and fully pressure packaged press pack IGBT. Secondly, the electro-thermal performance of two types packaged press pack IGBT devices under rated condition is studied and the rationality of the established model is verified by the experimental platform. Then, the electro-thermal stress of the multichip 3.3 kV/1 500 A press pack IGBT module is analyzed, and the electro-thermal stress difference reason of different packaged press pack IGBT devices is explored. Finally, the variation of electro-thermal stress characteristics inside the two types package press pack IGBT with the variation of clamping pressure and conduction current is compared. The results show that the silver sintered package improves the heat dissipation capability of press pack IGBT device while reducing the junction temperature and the conduction voltage droop. However, the silver sintered package also increases the mechanical stress on the surface of IGBT chip, and the effect of increased stress on the fatigue failure of IGBT device needs to be verified by experiments. |
| Key words: press pack IGBT fully pressure package silver sintered package multi-physical field modeling electro-thermal stress analysis |
