| 摘要: |
| 简述了IGBT电热耦合模型理论，在Saber仿真环境里搭建了动态电热联合仿真模型，计算得到结温和各层温度的精确瞬变过程。在相同加热电流下，采用红外热成像仪探测IGBT模块芯片表面瞬态温度分布，通过分析结温温升及温度特性验证了仿真计算结果，探测结果表明芯片表面温度分布并不均匀，中心温度较边缘要高3~5 K且开始上升很快，随后进入一个缓慢的上升过程。采用该动态电热联合仿真模型可对不同工作状态下模块各层的温度和上升时间进行预测，并结合探测结果提出了提高IGBT可靠性的方法。 |
| 关键词: 绝缘栅双极型晶体管 电热模型 仿真 热网络模型 耦合 结温 红外成像 温度分布 |
| DOI： |
| 分类号: |
| 基金项目:国家自然科学基金资助项目（50737004） |
|
| Dynamic electro-thermal simulation model of IGBT |
|
CHEN Ming, HU An
|
|
（National Key Laboratory for Vessel Integrated Power System Technology，Naval University of Engineering，Wuhan 430033，China
|
| Abstract: |
| The theory of IGBT（Insulated Gate Bipolar Transistor） electro-thermal model is presented and the dynamic electro-thermal simulation methodology is implemented in the Saber circuit simulator. The transition process of the temperature of junction and each physical layer are obtained by simulative calculation. The transient temperature distribution on the surface of IGBT chip is detected by the infrared image camera，and the characteristics of junction temperature rise and temperature field distribution are analyzed，which verifies the results of simulative calculation. The results of detection show that，the surface temperature in the center of IGBT chip is 3~5 K higher than that on the edge，and it rises quickly at the beginning and then enters into a slow rising process. The physical layer temperature and junction temperature fluctuation of IGBT module can be predicted with the dynamic electro-thermal simulation model under different operation conditions，and the measures to improve the reliability of IGBT module are presented based on detection results. |
| Key words: insulated gate bipolar transistors electro-thermal model computer simulation thermal network model coupling junction temperature infrared imaging temperature distribution |
